ZXMN10B08E6TA - SMD N channel transistors

ZXMN10B08E6TA
Description

Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.1W; SOT26

Specifications
Manufacturer DIODES INCORPORATED
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 1.5A
Power dissipation 1.1W
Case SOT26
Gate-source voltage ±20V
On-state resistance 0.5Ω
Mounting SMD
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat