YJSD12N03A-YAN - Multi channel transistors

YJSD12N03A-YAN
Description

Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 9.6A

Specifications
Manufacturer YANGJIE TECHNOLOGY
Type of transistor N-MOSFET x2
Technology TRENCH POWER LV
Polarisation unipolar
Drain-source voltage 30V
Drain current 9.6A
Pulsed drain current 50A
Power dissipation 2.5W
Case SOP8
Gate-source voltage ±20V
On-state resistance 15mΩ
Mounting SMD
Gate charge 23.6nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat