YJS2022A-YAN - SMD P channel transistors

YJS2022A-YAN
Description

Transistor: P-MOSFET; TRENCH POWER MV; unipolar; 20V; -10.4A; 3W

Specifications
Manufacturer YANGJIE TECHNOLOGY
Type of transistor P-MOSFET
Technology TRENCH POWER MV
Polarisation unipolar
Drain-source voltage 20V
Drain current -10.4A
Pulsed drain current -55A
Power dissipation 3W
Case SOP8
Gate-source voltage ±10V
On-state resistance 26mΩ
Mounting SMD
Gate charge 72.8nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat