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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / YJQ4666B-YAN

YJQ4666B-YAN - SMD P channel transistors

YJQ4666B-YAN
Description

Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -16V; -5.6A; 2.2W

Specifications
Manufacturer YANGJIE TECHNOLOGY
Type of transistor P-MOSFET
Technology TRENCH POWER LV
Polarisation unipolar
Drain-source voltage -16V
Drain current -5.6A
Pulsed drain current -28A
Power dissipation 2.2W
Case DFN2020-6
Gate-source voltage ±10V
On-state resistance 60mΩ
Mounting SMD
Gate charge 7.2nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat