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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / YJL03G10A-YAN

YJL03G10A-YAN - SMD N channel transistors

YJL03G10A-YAN
Description

Transistor: N-MOSFET; unipolar; 100V; 3A; Idm: 121A; 1.2W; SOT23

Specifications
Manufacturer YANGJIE TECHNOLOGY
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 3A
Pulsed drain current 12A
Power dissipation 1.2W
Case SOT23
Gate-source voltage ±20V
On-state resistance 0.14Ω
Mounting SMD
Gate charge 4.3nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat