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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / YJD80G06A-YAN

YJD80G06A-YAN - SMD N channel transistors

YJD80G06A-YAN
Description

Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 56A; 42.5W

Specifications
Manufacturer YANGJIE TECHNOLOGY
Type of transistor N-MOSFET
Technology SPLIT GATE TRENCH
Polarisation unipolar
Drain-source voltage 60V
Drain current 56A
Pulsed drain current 240A
Power dissipation 42.5W
Case TO252
Gate-source voltage ±20V
On-state resistance 11mΩ
Mounting SMD
Gate charge 31nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat