YJD20N06A-YAN - SMD N channel transistors

YJD20N06A-YAN
Description

Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 14A; Idm: 60A

Specifications
Manufacturer YANGJIE TECHNOLOGY
Type of transistor N-MOSFET
Technology TRENCH POWER MV
Polarisation unipolar
Drain-source voltage 60V
Drain current 14A
Pulsed drain current 60A
Power dissipation 22.5W
Case TO252
Gate-source voltage ±20V
On-state resistance 45mΩ
Mounting SMD
Gate charge 15nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat