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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WMT07N10TS-CYG

WMT07N10TS-CYG - SMD N channel transistors

WMT07N10TS-CYG
Description

Transistor: N-MOSFET; unipolar; 100V; 6.8A; Idm: 28A; 4.2W; SOT223

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 6.8A
Pulsed drain current 28A
Power dissipation 4.2W
Case SOT223
Gate-source voltage ±20V
On-state resistance 88mΩ
Mounting SMD
Gate charge 14.2nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat