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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WMT05N12TS-CYG

WMT05N12TS-CYG - SMD N channel transistors

WMT05N12TS-CYG
Description

Transistor: N-MOSFET; unipolar; 120V; 4.6A; Idm: 18.4A; 3W; SOT223

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 120V
Drain current 4.6A
Pulsed drain current 18.4A
Power dissipation 3W
Case SOT223
Gate-source voltage ±20V
On-state resistance 75mΩ
Mounting SMD
Gate charge 23nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat