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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / WMT04P06TS-CYG

WMT04P06TS-CYG - SMD P channel transistors

WMT04P06TS-CYG
Description

Transistor: P-MOSFET; unipolar; -60V; -3.8A; Idm: -15.2A; 2.7W

Specifications
Manufacturer WAYON
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -60V
Drain current -3.8A
Pulsed drain current -15.2A
Power dissipation 2.7W
Case SOT223
Gate-source voltage ±20V
On-state resistance 0.115Ω
Mounting SMD
Gate charge 30nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat