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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WMS175N10HG4-CYG

WMS175N10HG4-CYG - SMD N channel transistors

WMS175N10HG4-CYG
Description

Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 36A; 3.1W; SOP8

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 9A
Pulsed drain current 36A
Power dissipation 3.1W
Case SOP8
Gate-source voltage ±20V
On-state resistance 18mΩ
Mounting SMD
Gate charge 17nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat