WMS175DN10LG4-CYG - Multi channel transistors

WMS175DN10LG4-CYG
Description

Transistor: N-MOSFET x2; unipolar; 100V; 8.5A; Idm: 34A; 3.1W; SOP8

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET x2
Polarisation unipolar
Drain-source voltage 100V
Drain current 8.5A
Pulsed drain current 34A
Power dissipation 3.1W
Case SOP8
Gate-source voltage ±20V
On-state resistance 21mΩ
Mounting SMD
Gate charge 22.5nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat