WMS12P03T1-CYG - SMD P channel transistors

WMS12P03T1-CYG
Description

Transistor: P-MOSFET; unipolar; -30V; -11.5A; Idm: -45.8A; 3W; SOP8

Specifications
Manufacturer WAYON
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -30V
Drain current -11.5A
Pulsed drain current -45.8A
Power dissipation 3W
Case SOP8
Gate-source voltage ±20V
On-state resistance 9.6mΩ
Mounting SMD
Gate charge 30nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat