WMS11P04T1-CYG - SMD P channel transistors

WMS11P04T1-CYG
Description

Transistor: P-MOSFET; unipolar; -40V; -10.5A; Idm: -42A; 3.1W; SOP8

Specifications
Manufacturer WAYON
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -40V
Drain current -10.5A
Pulsed drain current -42A
Power dissipation 3.1W
Case SOP8
Gate-source voltage ±20V
On-state resistance 19mΩ
Mounting SMD
Gate charge 35nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat