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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WMS099N10LGS-CYG

WMS099N10LGS-CYG - SMD N channel transistors

WMS099N10LGS-CYG
Description

Transistor: N-MOSFET; unipolar; 100V; 8.2A; Idm: 48A; 3W; SOP8

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 8.2A
Pulsed drain current 48A
Power dissipation 3W
Case SOP8
Gate-source voltage ±20V
On-state resistance 14mΩ
Mounting SMD
Gate charge 57.5nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat