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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / WMS08P03T1-CYG

WMS08P03T1-CYG - SMD P channel transistors

WMS08P03T1-CYG
Description

Transistor: P-MOSFET; unipolar; -30V; -8A; Idm: -40A; 2.7W; SOP8

Specifications
Manufacturer WAYON
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -30V
Drain current -8A
Pulsed drain current -40A
Power dissipation 2.7W
Case SOP8
Gate-source voltage ±20V
On-state resistance 20mΩ
Mounting SMD
Gate charge 20nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat