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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WMS06N10TS-CYG

WMS06N10TS-CYG - SMD N channel transistors

WMS06N10TS-CYG
Description

Transistor: N-MOSFET; unipolar; 100V; 5.8A; Idm: 23A; 3.1W; SOP8

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 5.8A
Pulsed drain current 23A
Power dissipation 3.1W
Case SOP8
Gate-source voltage ±20V
On-state resistance 45mΩ
Mounting SMD
Gate charge 37.9nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat