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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / WMS05P06T1-CYG

WMS05P06T1-CYG - SMD P channel transistors

WMS05P06T1-CYG
Description

Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -18A; 3.1W; SOP8

Specifications
Manufacturer WAYON
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -60V
Drain current -4.5A
Pulsed drain current -18A
Power dissipation 3.1W
Case SOP8
Gate-source voltage ±20V
On-state resistance 90mΩ
Mounting SMD
Gate charge 15nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat