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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WMQ099N10LG2-CYG

WMQ099N10LG2-CYG - SMD N channel transistors

WMQ099N10LG2-CYG
Description

Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 188A; 41.6W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 47A
Pulsed drain current 188A
Power dissipation 41.6W
Case PDFN3030-8
Gate-source voltage ±20V
On-state resistance 11mΩ
Mounting SMD
Gate charge 23nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat