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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WMO9N50D1B-CYG

WMO9N50D1B-CYG - SMD N channel transistors

WMO9N50D1B-CYG
Description

Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 104W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Technology WMOS™ D1
Polarisation unipolar
Drain-source voltage 500V
Drain current 9A
Pulsed drain current 36A
Power dissipation 104W
Case TO252
Gate-source voltage ±30V
On-state resistance 0.68Ω
Mounting SMD
Gate charge 72nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat