WMO80P04TS-CYG - SMD P channel transistors

WMO80P04TS-CYG
Description

Transistor: P-MOSFET; unipolar; -40V; -80A; Idm: -320A; 81.16W

Specifications
Manufacturer WAYON
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -40V
Drain current -80A
Pulsed drain current -320A
Power dissipation 81.16W
Case TO252
Gate-source voltage ±20V
On-state resistance 8.2mΩ
Mounting SMD
Gate charge 110nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat