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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / WMO35P04T1-CYG

WMO35P04T1-CYG - SMD P channel transistors

WMO35P04T1-CYG
Description

Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -140A; 40.3W; TO252

Specifications
Manufacturer WAYON
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -40V
Drain current -35A
Pulsed drain current -140A
Power dissipation 40.3W
Case TO252
Gate-source voltage ±20V
On-state resistance 19mΩ
Mounting SMD
Gate charge 35nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat