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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / WMO25P06T1-CYG

WMO25P06T1-CYG - SMD P channel transistors

WMO25P06T1-CYG
Description

Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -100A; 44.6W; TO252

Specifications
Manufacturer WAYON
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -60V
Drain current -25A
Pulsed drain current -100A
Power dissipation 44.6W
Case TO252
Gate-source voltage ±20V
On-state resistance 40mΩ
Mounting SMD
Gate charge 17nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat