WMO20N20JN-CYG - SMD N channel transistors

WMO20N20JN-CYG
Description

Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 60A; 59W; TO252

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 200V
Drain current 12A
Pulsed drain current 60A
Power dissipation 59W
Case TO252
Gate-source voltage ±20V
On-state resistance 80mΩ
Mounting SMD
Gate charge 4.1nC
Kind of package reel
tape
Kind of channel enhancement
Reverse recovery time 110ns
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Development and design: Seventh Cat