WMO11N65C4-CYG - SMD N channel transistors

WMO11N65C4-CYG
Description

Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 57W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Technology WMOS™ C4
Polarisation unipolar
Drain-source voltage 650V
Drain current 4.8A
Pulsed drain current 19A
Power dissipation 57W
Case TO252
Gate-source voltage ±30V
On-state resistance 0.56Ω
Mounting SMD
Gate charge 2.1nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat