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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / WMO09P10TS-CYG

WMO09P10TS-CYG - SMD P channel transistors

WMO09P10TS-CYG
Description

Transistor: P-MOSFET; unipolar; -100V; -9A; Idm: -36A; 54.3W; TO252

Specifications
Manufacturer WAYON
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -100V
Drain current -9A
Pulsed drain current -36A
Power dissipation 54.3W
Case TO252
Gate-source voltage ±20V
On-state resistance 0.31Ω
Mounting SMD
Gate charge 15nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat