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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WMO080N10HG2-CYG

WMO080N10HG2-CYG - SMD N channel transistors

WMO080N10HG2-CYG
Description

Transistor: N-MOSFET; unipolar; 100V; 53.7A; Idm: 340A; 108.7W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 53.7A
Pulsed drain current 340A
Power dissipation 108.7W
Case TO252
Gate-source voltage ±20V
On-state resistance 8mΩ
Mounting SMD
Gate charge 21nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat