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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WMO053NV8HGS-CYG

WMO053NV8HGS-CYG - SMD N channel transistors

WMO053NV8HGS-CYG
Description

Transistor: N-MOSFET; unipolar; 85V; 118A; Idm: 472A; 138.9W; TO252

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 85V
Drain current 118A
Pulsed drain current 472A
Power dissipation 138.9W
Case TO252
Gate-source voltage ±20V
On-state resistance 5.8mΩ
Mounting SMD
Gate charge 72.6nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat