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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WMO048NV6HG4-CYG

WMO048NV6HG4-CYG - SMD N channel transistors

WMO048NV6HG4-CYG
Description

Transistor: N-MOSFET; unipolar; 65V; 90A; Idm: 360A; 71.4W; TO252

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 65V
Drain current 90A
Pulsed drain current 360A
Power dissipation 71.4W
Case TO252
Gate-source voltage ±20V
On-state resistance 5.2mΩ
Mounting SMD
Gate charge 28.5nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat