WMN26N60C4-CYG - THT N channel transistors

WMN26N60C4-CYG
Description

Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Technology WMOS™ C4
Polarisation unipolar
Drain-source voltage 600V
Drain current 10.5A
Pulsed drain current 40A
Power dissipation 135W
Case TO262
Gate-source voltage ±30V
On-state resistance 0.19Ω
Mounting THT
Gate charge 22.1nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat