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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WMMB020N10HG4-CYG

WMMB020N10HG4-CYG - SMD N channel transistors

WMMB020N10HG4-CYG
Description

Transistor: N-MOSFET; unipolar; 100V; 238A; Idm: 952A; 277.8W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 238A
Pulsed drain current 952A
Power dissipation 277.8W
Case TO263-7
Gate-source voltage ±20V
On-state resistance 2.5mΩ
Mounting SMD
Gate charge 123.4nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat