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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WMM6N90D1-CYG

WMM6N90D1-CYG - SMD N channel transistors

WMM6N90D1-CYG
Description

Transistor: N-MOSFET; WMOS™ D1; unipolar; 900V; 6A; Idm: 24A; 100W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Technology WMOS™ D1
Polarisation unipolar
Drain-source voltage 900V
Drain current 6A
Pulsed drain current 24A
Power dissipation 100W
Case TO263
Gate-source voltage ±30V
On-state resistance 1.7Ω
Mounting SMD
Gate charge 86.2nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat