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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WMM053N10HGS-CYG

WMM053N10HGS-CYG - SMD N channel transistors

WMM053N10HGS-CYG
Description

Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 480A; 164.5W; TO263

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 120A
Pulsed drain current 480A
Power dissipation 164.5W
Case TO263
Gate-source voltage ±20V
On-state resistance 5.5mΩ
Mounting SMD
Gate charge 82.5nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat