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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WMM037N10HGS-CYG

WMM037N10HGS-CYG - SMD N channel transistors

WMM037N10HGS-CYG
Description

Transistor: N-MOSFET; unipolar; 100V; 170A; Idm: 680A; 258.6W; TO263

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 170A
Pulsed drain current 680A
Power dissipation 258.6W
Case TO263
Gate-source voltage ±20V
On-state resistance 3.7mΩ
Mounting SMD
Gate charge 86.5nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat