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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WMM023N08HGS-CYG

WMM023N08HGS-CYG - SMD N channel transistors

WMM023N08HGS-CYG
Description

Transistor: N-MOSFET; unipolar; 80V; 270A; Idm: 1080A; 329W; TO263

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 80V
Drain current 270A
Pulsed drain current 1.08kA
Power dissipation 329W
Case TO263
Gate-source voltage ±20V
On-state resistance 2.6mΩ
Mounting SMD
Gate charge 145nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat