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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / WMK4N65D1B-CYG

WMK4N65D1B-CYG - THT N channel transistors

WMK4N65D1B-CYG
Description

Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 112W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Technology WMOS™ D1
Polarisation unipolar
Drain-source voltage 650V
Drain current 4A
Pulsed drain current 16A
Power dissipation 112W
Case TO220-3
Gate-source voltage ±30V
On-state resistance 2.2Ω
Mounting THT
Gate charge 14.5nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat