WMK110N20HG2-CYG - THT N channel transistors

WMK110N20HG2-CYG
Description

Transistor: N-MOSFET; unipolar; 200V; 125A; Idm: 500A; 347.2W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 200V
Drain current 125A
Pulsed drain current 500A
Power dissipation 347.2W
Case TO220-3
Gate-source voltage ±20V
On-state resistance 11mΩ
Mounting THT
Gate charge 73.8nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat