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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / WMJ99N60F2-CYG

WMJ99N60F2-CYG - THT N channel transistors

WMJ99N60F2-CYG
Description

Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 60A; Idm: 350A; 460W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Technology WMOS™ F2
Polarisation unipolar
Drain-source voltage 600V
Drain current 60A
Pulsed drain current 350A
Power dissipation 460W
Case TO247-3
Gate-source voltage ±30V
On-state resistance 25.5mΩ
Mounting THT
Gate charge 174nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat