WMJ90N65SR-CYG - THT N channel transistors

WMJ90N65SR-CYG
Description

Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Technology WMOS™ SR
Polarisation unipolar
Drain-source voltage 650V
Drain current 60A
Pulsed drain current 350A
Power dissipation 460W
Case TO247-3
Gate-source voltage ±30V
On-state resistance 33mΩ
Mounting THT
Gate charge 183nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat