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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / WMJ80R350S-CYG

WMJ80R350S-CYG - THT N channel transistors

WMJ80R350S-CYG
Description

Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 183W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Technology WMOS™ S
Polarisation unipolar
Drain-source voltage 800V
Drain current 8.4A
Pulsed drain current 56A
Power dissipation 183W
Case TO247-3
Gate-source voltage ±30V
On-state resistance 0.33Ω
Mounting THT
Gate charge 31nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat