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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / WMJ80N65F2-CYG

WMJ80N65F2-CYG - THT N channel transistors

WMJ80N65F2-CYG
Description

Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 45A; Idm: 245A; 410W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Technology WMOS™ F2
Polarisation unipolar
Drain-source voltage 650V
Drain current 45A
Pulsed drain current 245A
Power dissipation 410W
Case TO247-3
Gate-source voltage ±30V
On-state resistance 37mΩ
Mounting THT
Gate charge 26.2nC
Kind of package tube
Kind of channel enhancement
Reverse recovery time 190ns
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Development and design: Seventh Cat