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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / WMJ80N60EM-CYG

WMJ80N60EM-CYG - THT N channel transistors

WMJ80N60EM-CYG
Description

Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 48A; Idm: 295A; 430W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Technology WMOS™ EM
Polarisation unipolar
Drain-source voltage 600V
Drain current 48A
Pulsed drain current 295A
Power dissipation 430W
Case TO247-3
Gate-source voltage ±30V
On-state resistance 43mΩ
Mounting THT
Gate charge 142nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat