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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / WMJ53N65F2-CYG

WMJ53N65F2-CYG - THT N channel transistors

WMJ53N65F2-CYG
Description

Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 26A; Idm: 90A; 350W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Technology WMOS™ F2
Polarisation unipolar
Drain-source voltage 650V
Drain current 26A
Pulsed drain current 90A
Power dissipation 350W
Case TO247-3
Gate-source voltage ±30V
On-state resistance 78mΩ
Mounting THT
Gate charge 58nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat