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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / WMJ3N120D1-CYG

WMJ3N120D1-CYG - THT N channel transistors

WMJ3N120D1-CYG
Description

Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Technology WMOS™ D1
Polarisation unipolar
Drain-source voltage 1.2kV
Drain current 3A
Pulsed drain current 12A
Power dissipation 156.2W
Case TO247-3
Gate-source voltage ±30V
On-state resistance 6.3Ω
Mounting THT
Gate charge 22.2nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat