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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / WMJ18N50D1B-CYG

WMJ18N50D1B-CYG - THT N channel transistors

WMJ18N50D1B-CYG
Description

Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 271W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Technology WMOS™ D1
Polarisation unipolar
Drain-source voltage 500V
Drain current 18A
Pulsed drain current 72A
Power dissipation 271W
Case TO247-3
Gate-source voltage ±30V
On-state resistance 0.28Ω
Mounting THT
Gate charge 40nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat