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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / WMJ10N80D1-CYG

WMJ10N80D1-CYG - THT N channel transistors

WMJ10N80D1-CYG
Description

Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Technology WMOS™ D1
Polarisation unipolar
Drain-source voltage 800V
Drain current 10A
Pulsed drain current 40A
Power dissipation 215W
Case TO247-3
Gate-source voltage ±30V
On-state resistance 910mΩ
Mounting THT
Gate charge 33nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat