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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / WMJ028N10HGS-CYG

WMJ028N10HGS-CYG - THT N channel transistors

WMJ028N10HGS-CYG
Description

Transistor: N-MOSFET; unipolar; 100V; 228A; Idm: 912A; 320.5W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 228A
Pulsed drain current 912A
Power dissipation 320.5W
Case TO247-3
Gate-source voltage ±20V
On-state resistance 3mΩ
Mounting THT
Gate charge 145nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat