WMB510N15HG2-CYG - SMD N channel transistors

WMB510N15HG2-CYG
Description

Transistor: N-MOSFET; unipolar; 150V; 28A; Idm: 112A; 80.6W

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 150V
Drain current 28A
Pulsed drain current 112A
Power dissipation 80.6W
Case PDFN5060-8
Gate-source voltage ±20V
On-state resistance 51mΩ
Mounting SMD
Gate charge 12nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat