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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / WMB240P10HG4-CYG

WMB240P10HG4-CYG - SMD P channel transistors

WMB240P10HG4-CYG
Description

Transistor: P-MOSFET; unipolar; -100V; -33A; Idm: -212A; 147W

Specifications
Manufacturer WAYON
Type of transistor P-MOSFET
Polarisation unipolar
Drain-source voltage -100V
Drain current -33A
Pulsed drain current -212A
Power dissipation 147W
Case PDFN5060-8
Gate-source voltage ±20V
On-state resistance 26mΩ
Mounting SMD
Gate charge 64.6nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat