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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / WMB175N10HG4-CYG

WMB175N10HG4-CYG - SMD N channel transistors

WMB175N10HG4-CYG
Description

Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 184A; 71.4W; 30ns

Specifications
Manufacturer WAYON
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 29A
Pulsed drain current 184A
Power dissipation 71.4W
Case PDFN5060-8
Gate-source voltage ±20V
On-state resistance 17.5mΩ
Mounting SMD
Gate charge 17nC
Kind of package reel
tape
Kind of channel enhancement
Reverse recovery time 30ns
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Development and design: Seventh Cat